ZHANG Rengang
Professor
Dept. of Applied Physics
E-MAIL: zhangrengang@wust.edu.cn
Educational Background
2002--2005, Institution of High Energy Physics, Chinese Academy of Sciences, Condensed Matter Physics, Doctor.
1999--2002, Wuhan University of Technology, Materials Physics and Chemistry, Master.
1993-1997, Jianghan University, Chemical Engineering, Bachelor.
Work Experience
2022--present, Professor, Dept. of Applied Physics, Wuhan University of Science and Technology, China
2007--2021, Associate Professor, Dept. of Applied Physics, Wuhan University of Science and Technology, China
2005--2006, Lecturer, Dept. of Applied Physics, Wuhan University of Science and Technology, China
1997--1999, Assistant Engineer, Wuhan Inorganic Salt Chemical Plant, China.
Research Field
Main research field is semiconductor materials, such as:
1: Preparation and properties of semiconductor thin-films.
2: Microstructure and calculation of semiconductor materials.
Academic Achievements
1. Effect of Ag incorporation on the microstructure and properties of ZnS thin film. Optical Materials, 2024, 148: 114879（Corresponding author）
2. Effect of different sulfur pressure annealing on properties of sputtering-deposited ZnS thin films. Acta Phys. Sin. (in Chinese), 2023, 72(3):034207（Corresponding author）
3. Effect of annealing time on the properties of ZnS thin films prepared by two-step sulfidation. Journal of Wuhan University of Science and Technology (in Chinese), 2022, 45(2): 93-98（Corresponding author）
4. Investigation on structural and optical properties of ZnSe thin films prepared by selenization. Superlattices and Microstructures, 2021, 156:106965（Corresponding author）
5. Effect of film thickness on structural and optical properties of ZnS:Cu films prepared by vulcanization. Superlattices and Microstructures, 2020, 146:106671（Corresponding author）
6. Properties of ZnS thin films prepared by different-temperature sulfidation. Electronic Components and Materials (in Chinese), 2020, 39(3): 33-38 (Corresponding author)
7. Effect of deposition time of Zn on properties of ZnS thin films prepared by low-temperature sulfidation. Electronic Components and Materials (in Chinese), 2020, 39(5):43-48 (Corresponding author)
8. Physical Properties of ZnS Thin Films Prepared by Low-temperature Sulfidation. Nuclear Physics Review (in Chinese), 2020, 37(3):804-808(Corresponding author)
9. Influence of low-temperature sulfidation on the structure of ZnS thin films. Chinese Physics B, 2019, 28(2): 024214 (Corresponding author)
10. Effect of low temperature vulcanization time on the structure and optical properties of ZnS thin films. Applied Surface Science, 2019, 498: 143876 (Corresponding author)
11. Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film. Nuclear Physics Review (in Chinese), 2017, 34(3):651-655(Corresponding author)
12. Structure and optical properties of ZnS thin films grown by a sulfidation reaction. Journal of Wuhan University of Science and Technology (in Chinese), 2016, 39(5): 343-347 (Corresponding author)
13. Influence of Annealing on the Properties of ZnS Thin Films Prepared by Sulfidation. Journal of Synthetic Crystals(in Chinese), 2013, 42(6):1154-1158（First author）
14. Study on the structural and optical properties of ZnS thin films prepared by sulfidation. Electronic Components and Materials (in Chinese), 2013, 32(5):23-25（First author）
15. Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn. Vacuum, 2012, 86:1210-1214（First author）
16. Structural and Optical Properties of ZnO Thin Films after Thermal Sulfidation in Sulfur Vapor. Journal of Synthetic Crystals(in Chinese), 2012, 41(6):1700-1704（First author）
17. Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO. Materials Chemistry and Physics, 2008, 112:557-561（First author）
18. Sulfidation growth and characterization of nanocrystalline ZnS thin films. Vacuum, 2008, 82: 1208-1211（First author）
